The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1999
Filed:
Jun. 28, 1996
Applicant:
Inventors:
Roger L Roisen, Minnetrista, MN (US);
Jeffrey S Kueng, New Brighton, MN (US);
Assignee:
Honeywell Inc., Minneapolis, MN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438163 ; 438164 ; 438154 ; 438228 ;
Abstract
Method for forming a CMOS transistor in a silicon layer positioned above an underlying buried oxide layer including isolating a first active area and a second active area; forming an n-well and a p-well having specified back gate threshold voltages; forming gates over the wells; forming a lightly doped drain region in the p-well that extends through the silicon layer; and implanting ions to form a source and a drain region in the p-well to provide a lightly doped drain drift region.