The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Nov. 08, 1996
Byung-suk Park, Suwon, KR;
Ill-hwan Jeoun, Suwon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for correcting a thin-film formation program of semiconductor device includes the steps of measuring a thin-film thickness formed by thin-film formation equipment controlled by a thin-film formation program while cooling a wafer on which a thin-film has been formed; transforming the measured thickness into an electrical signal (d.sub.m); transforming a target thickness into a standard electrical signal (d.sub.0); comparing the electrical signal (d.sub.m) with the standard electrical signal (d.sub.0), and outputting a first signal to the thin-film formation equipment if the electrical signal (d.sub.m) is less than the standard electrical signal (d.sub.0) and outputting a second signal to the thin-film formation equipment if the electrical signal (d.sub.m) is greater than the standard electrical signal (d.sub.0). The first signal increases, and the second signal decreases the process variables of thin-film formation program. As a result, thickness uniformity can be maintained without error or time delay, by automatically correcting the thin film formation program.