The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Nov. 10, 1997
Yutaka Nagai, Tokyo, JP;
Mitsubishi Denki Kabusiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser includes a lower cladding layer, an active layer, a first upper cladding layer, an etch-stopping layer, a second upper cladding layer, and a contact layer successively laminated on a substrate, a ridge waveguide formed by selectively etching the second upper cladding layer and the contact layer with the use of a stripe-like insulating film as a mask to form a ridge, an AlAs oxide layer on the substrate and a second electrode on the substrate. Incorrect positioning does not occur between the ridge waveguide and a first electrode, reliability is improved, and the distribution of effective refractive index transverse to the resonation of the laser is reduced. A detailed method of fabricating this semiconductor laser is also provided.