The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Jul. 14, 1997
Hiroyuki Kobatake, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
An n-type drain diffusion layer, an n-type source diffusion layer and an n-type control gate diffusion layer are formed on the surface of a p-type semiconductor substrate. Furthermore, an n-type well is connected to the control gate diffusion layer. A control gate electrode of aluminum is connected to the well. An isolation oxide layer is formed between the control gate electrode and the control gate diffusion layer. A first insulation layer is formed on the drain diffusion layer, the source diffusion layer and the control gate diffusion layer. A floating gate is formed on the first insulation layer. The upper portion and the side portion of the floating gate are covered with a second insulation layer. The floating gate is completely covered with a protective gate through the second insulation layer. The end edge of the protective gate opposes the well through the isolation oxide layer. The drain diffusion layer and the protective gate are connected to each other to have the same potential.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile