The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Apr. 18, 1996
Hammam Elabd, Sunnyvale, CA (US);
Loral Fairchild Corporation, Syosset, NY (US);
Abstract
A low light level detection and imaging device including a photon sensing and counting device for image detection that is capable of detecting/imaging low photon flux levels over a wide spectral range using either image tube or solid state readout. The sensing and counting is composed of a detector stack having several photoconductive layers, at least one layer of the stack being an amorphous Selenium layer that is capable of high gain avalanche multiplication. The stack further includes an amorphous Silicon layer deposited on the amorphous Selenium layer to absorb infrared and ultraviolet radiation to enhance responsivity in the red and near-IR region, whereas the purpose of the amorphous Selenium layer is to provide high responsivity in the blue region and also to provide avalanche gain or multiplication of the photo generated carriers in both the amorphous Silicon or Selenium layers. Hence, the Selenium avalanching layer 12 provides low noise amplification for carriers injected from the Silicon layer into the Selenium layer.