The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
May. 28, 1997
Applicant:
Inventors:
Assignee:
Tower Semiconductor Ltd., Migdal Haemek, IL;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438631 ; 438632 ; 438760 ; 438902 ; 438787 ;
Abstract
An improved method for depositing a flow fill layer of an integrated circuit. Two flowlayers and two cap layers are deposited. The wafer is warmed between the deposition of the first cap layer and the deposition of the second flowlayer, to evaporate water from the first flowlayer. Preferably, each of the cap layers is deposited in two separate steps of plasma enhanced chemical vapor deposition, to inhibit crack formation in the flowlayers. Most preferably, after the depositions of each flowlayer, the flowlayer is planarized by flowing H.sub.2 O.sub.2 thereupon.