The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Jul. 26, 1996
Applicant:
Inventors:
Assignee:
Matsushita Electronics Corporation, Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438132 ; 438253 ; 438634 ;
Abstract
A manufacturing method for a semiconductor device, whereby poly-silicon serving as an etching stopper is formed above a redundant fuse at the same time as a cell plate is. A silicon nitride film, an oxide film, and another oxide film on the redundant fuse are consecutively etched using the poly-silicon as the etching stopper. Then the poly-silicon is etched.