The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Jun. 28, 1996
Hiroshi Yoshida, Sendai, JP;
Abstract
Hydrogenated amorphous carbon mainly composed of sp.sup.3 structure is prepared by adding hydrogen to carbon or decomposing hydrogenated carbon gas, and then rapidly cooling the mixed or decomposed gas on a substrate. The hydrogenated amorphous carbon is irradiated with X rays to excite electrons on the 1s shells of carbon atoms. The carbon atoms are rendered to a state excited with 2.sup.+ ion due to Auger effect caused by the exciation, so as to form atomic vacancies and interlattice atomic couples. The hydrogenated amorphous carbon is then annealed, and carbon atoms are rearranged to rotated triangular pattern. Thus, diamond good of crystallinity useful as a high-temperature semiconductor device, ultraviolet laser diode or protective film can be synthesized at a relatively low temperature and a low pressure. The process is applicable for the growth of a diamond single crystal thin film on a single crystal substrate such as amorphous carbon, silicon, or a Group III-V or II-VI compound semiconductor.