The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Dec. 12, 1997
Shigeki Nagasaka, Fuchu, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device including a serial I/O buffer; DRAM cells; and SAM cells arranged in line, the SAM cells corresponding to the DRAM cells in one row. In the device in a first mode, the SAM cells are divided into N first portions each having boundaries, data stored in the SAM cells being transferred to the serial I/O buffer sequentially until the SAM cells in the boundaries of the first portions are transferred to the serial I/O buffer. In a second mode, the SAM cells are divided into M (N>M) second portions each having boundaries, data stored in the SAM cells being transferred to the serial I/O buffer sequentially until the SAM cells in the boundaries of the second portions arc transferred to the serial input output buffer. The semiconductor-memory device further includes a circuit for detecting changes from the first mode to the second mode and from the second mode to the first mode. The semiconductor memory device further includes a circuit for generating first and second signals. When the mode is changed from the first mode to the second mode, the circuit generates the first signal. When the mode is changed from the second mode to the first mode the circuit generates the second signal.