The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Mar. 20, 1998
Applicant:
Inventor:
Tomoya Kawagoe, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365145 ; 365149 ;
Abstract
A nonvolatile semiconductor memory cell includes four ferroelectric capacitors and six N channel MOS transistors. When data is to be written or read to or from a certain ferroelectric capacitor, corresponding two word lines are activated.
Kawagoe, Tomoya. (1999). Nonvolatile semiconductor memory device reduced in occupy area of memory (U.S. Patent No. 5889695). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5889695
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile