The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Jul. 28, 1997
Makoto Mizuno, Utsunomiya, JP;
Toshihiro Shimizu, Utsunomiya, JP;
Masaaki Fujishima, Utsunomiya, JP;
Koji Hanihara, Isawa-cho, JP;
Itaru Tsuchiya, Shikishima-cho, JP;
Yasuo Yagi, Kawasaki, JP;
Kawasaki Steel Corporation, Kobe, JP;
Pioneer Electronic Corporation, Tokyo, JP;
Pioneer Video Corporation, Yamanashi, JP;
Abstract
A method for manufacturing semiconductor device is provided, this method comprises the steps of: depositing a metal film for forming wirings on a substrate; forming a wiring layer, wherein dummy wiring is inserted between wiring space where the dummy wiring can be inserted, and wiring space, where the dummy wiring cannot be inserted, is reduced by widening wiring pattern facing the wiring space; forming an interlayer insulating film on said wiring layer; and flattening surface of the interlayer insulating film. The film can be flattened by a CMP method or by an etchback of entire surface of the film. It is possible to flatten the surface of the semiconductor device cost-effectively and precisely.