The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Feb. 26, 1997
Applicant:
Inventors:
Timothy David Bestwick, Oxford, GB;
Craig Tombling, Oxfordshire, GB;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 46 ; 438 40 ; 438 41 ; 438706 ; 148D / ;
Abstract
An (Al,Ga)As/(Al,Ga,In)P semiconductor layer structure is etched using an SiCl.sub.4 or an SiCl.sub.4 /(He,Ne) plasma. The etching is carried out at 0.degree. to 80.degree. C. and at a plasma pressure below 1.33.times.10.sup.-1 Pa (1 mTorr). The etched surfaces are sufficiently smooth for the etching process to be used in the production of (Al,Ga)As/(Al,Ga,In)P semiconductor lasers.
Bestwick, Timothy. (1999). Method of etching semiconductor laser device having al.sub.x ga.sub.1-x (U.S. Patent No. 5888844). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5888844
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile