The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Dec. 15, 1997
Applicant:
Inventors:
Assignee:
SGS-Thomson Microelectronics S.r.l., Agrate Brianza, IT;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438-4 ; 438594 ; 438257 ; 438308 ;
Abstract
The process described requires the formation of floating-gate non-volatile memory cells entirely similar in structure to those produced by known processes. The process comprises an annealing treatment at relatively low temperature (430.degree. C.) to repair damage due to plasma treatments. To obtain threshold voltage values for the cells close to the theoretical values, especially for cells with particularly extended interconnections, the cells are subjected to ultraviolet radiation before the annealing treatment, in order to neutralize any electrical charges present in the floating-gate electrodes of the cells.