The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Jul. 12, 1996
Hyun Jo Yang, Chungcheongbuk-do, KR;
Byung Chan Kim, Kyungki-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
A halftone phase shift mask includes a substrate, a first light-shielding layer formed in one region of the substrate for shielding light between a plurality of key patterns, and a second light-shielding layer formed in another region of the substrate for shielding light between a plurality of cell patterns, whereby a generation of sidelobe is prevented. A method of manufacturing a phase shift mask includes forming a first light-shielding layer on one region of a substrate, forming a second light-shielding layer on another region of the substrate and on the first light-shielding layer, and patterning the first and second light-shielding layers to thereby form a plurality of cell patterns and key patterns.