Dry etching method and manufacturing method of manufacturing el element

Abstract

A dry etching method performing dry etching of a material containing zinc forms and patterns a resist on the material to be etched, and etches the material using an etching gas which is a mixed gas of methane gas and an inert gas. A dry etching method that dry etches a material containing zinc etches the material using an etching gas that consists only of methane gas, an inert gas, and hydrogen gas alone. Another dry etching method that dry etches a material containing zinc introduces an etching gas that contains methane gas, an inert gas, and hydrogen gas into a dry etching device, in which the flow rate of the hydrogen gas is set such that it is equal to or greater than the value at which the amount of dissociated hydrogen becomes saturated, and etches the material using the etching gas. An EL element manufacturing method forms a first luminescent material containing zinc in its composition on a first insulated layer, forms a first resist that has a first pattern on the first luminescent material, dry etches the first luminescent material through the first resist, thereby forming the first luminescent layer; forms a second luminescent material having zinc in its composition on the first luminescent layer, forms a second resist on the second luminescent material, and dry etches the second luminescent material through the second resist.