The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Dec. 11, 1995
Applicant:
Inventor:
Atsushi Ogura, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117 94 ; 117 84 ; 117106 ;
Abstract
The invention provides a method of fabricating an SOI substrate including the steps of introducing crystal defects at a desired depth in a silicon substrate, and thereafter, implanting oxygen or nitrogen ions into the silicon substrate, and thermally annealing the silicon substrate. The method of the present invention makes it possible to fabricate an SOI substrate with fewer crystal defects and lower fabrication cost than is possible according to the prior art.
Ogura, Atsushi. (1999). Method of fabricating soi substrate (U.S. Patent No. 5888297). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5888297
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile