The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1999
Filed:
Jun. 19, 1997
Dong-il Seo, Suwon, KR;
Hyung-dong Kim, Suwon, KR;
Samsung Electronics, Co. Ltd., Suwon, KR;
Abstract
A boost voltage generating circuit for a memory device prevents excessive voltage on a word line for a memory cell array and reduces power consumption by utilizing an internal array reference voltage signal as a reference signal for the boost voltage generating circuit. The circuit maintains the boost voltage power supply signal at a predetermined level independently of the voltage level of an internal peripheral reference voltage signal which is applied to a peripheral circuit and which can be increased to increase the speed of the memory device without causing excessive voltage on the word line. The boost voltage generating circuit includes a level detector circuit which receives the array reference voltage signal as a reference signal. The boost voltage generating circuit also includes a pulse generator and a pumping circuit which utilize the array reference voltage signal as a power supply.