The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1999
Filed:
Apr. 21, 1997
Ofira M Von Stein, Seminole, FL (US);
Raytheon Company, Lexington, MA (US);
Abstract
An odd order MESFET frequency multiplier which outputs a desired odd harmonic of a fundamental tone. The frequency multiplier includes a multiplier stage with a MESFET having a harmonic response dependent upon a plurality of bias conditions and the input RF power level. The MESFET includes a drain port coupled to an output matching network sized and configured for a predetermined load at a selected output frequency. The output matching network includes RF shorts for reflecting energy to the MESFET from a plurality of undesired even harmonics. Coupled to the output matching circuit is a bandpass filter sized and configured for the predetermined load. The bandpass filter includes RF shorts for reflecting energy to the MESFET from a plurality of undesired odd harmonics, wherein the reflected energy from the undesired even harmonics and the undesired odd harmonics are combined at the MESFET to provide additional energy at the desired odd harmonic.