The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1999
Filed:
May. 30, 1996
Masaaki Niwa, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A field-effect transistor includes a semiconductor substrate including a source region, a drain region and a channel region located between the source and drain regions; a gate insulating film formed on at least the channel region of the semiconductor substrate; and a gate electrode formed on the gate insulating film. The surface the semiconductor substrate includes a plural of terraces having crystallographically smooth planes and at least one step located in a boundary portion of the plurality of terraces. The step extends substantially along a channel length direction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile