The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1999
Filed:
Jul. 09, 1997
Kenji Hosogi, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of fabricating a field effect transistor with a spike-gate structure including forming a semiconductor layer on a semi-insulating substrate, and forming a recess having a spike shape in which a portion of a gate electrode projects into the semiconductor layer, in the semiconductor layer. The formation of the recess includes forming a narrow damaged layer in the semiconductor layer by one of focused ion beamion implantation and ion implantation; and wet-etching the semiconductor layer utilizing accelerated etching of the damaged layer, thereby forming a recess having a spike groove. As described above, without performing the complicated processes as in the prior art fabricating method shown in FIGS. 12(a)-12(i), by performing one FIB implantation process, an FET with a spike-gate structure can be fabricated by using simpler and fewer processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile