The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1999
Filed:
Dec. 03, 1997
Applicant:
Inventors:
Hyun-bo Shin, Kyungki-do, KR;
Jong-young Kim, Kyungki-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438255 ; 438396 ; 438398 ;
Abstract
A method of forming a hemispherical grained silicon layer includes the step of forming a first amorphous silicon layer on an integrated circuit substrate by exposing the integrated circuit substrate to a first atmosphere including a silicon source gas and an anti-nucleation gas. A hemispherical grained silicon layer is formed on the amorphous silicon layer opposite the substrate. The anti-nucleation gas can be nitrogen oxide or oxygen.