The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 1999

Filed:

Apr. 24, 1996
Applicant:
Inventor:

Peter G Borden, San Mateo, CA (US);

Assignee:

Boxer Cross, Inc., Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R / ;
U.S. Cl.
CPC ...
324752 ; 324765 ; 324750 ;
Abstract

A system for measuring the doping levels of a doped region in a semiconductor substrate, wherein an analyzer beam and a reference beam are generated, the analyzer and reference beams being substantially parallel and spaced apart from each other so that the analyzer and reference beams are non-overlapping. The analyzer beam is focused on a preselected doped region of the substrate and the reference beam is focused on an undoped region of the substrate, the doped region generating a phase shift of the analyzer beam relative to the reference beam corresponding to a level of doping of the doped region of the substrate. A detector detects the phase shift of the analyzer beam relative to the reference beam, and the doping level of the substrate in the preselected doped region is determined from the phase shift. The doping level measuring system may be used to control a semiconductor fabrication process.


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