The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1999
Filed:
Nov. 23, 1992
Applicant:
Inventors:
Daisuke Ueda, Nagaokakyo City, JP;
Hiromitsu Takagi, Shiga, JP;
Assignee:
Matsushita Electronics Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257331 ; 257332 ; 257622 ; 257628 ;
Abstract
An insulated gate FET such as a power MOS FET is made by forming a rectangular parallelepiped-shaped recess in a direction that the side walls of the recess make 45.degree. angle against the <100> direction of the silicon substrate having (100) plane as principal surface, and the vertical side walls of (010) or (001) planes are used as channel region of the insulated gate FET, thereby assuring a large electron mobility in the channel, hence low channel resistance suitable for high power operation.