The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1999
Filed:
Aug. 26, 1994
Applicant:
Inventor:
Katsuhiro Tsukamoto, Hyogo-ken, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257296 ; 257313 ; 257655 ;
Abstract
A semiconductor memory device comprises a capacitor and a transistor formed on a main surface of a semiconductor substrate and a buried layer of high impurity concentration formed in the substrate, wherein the buried layer has the same conductivity type as that of the substrate and is formed shallow under the capacitor and deep under the transistor.