The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1999
Filed:
Nov. 13, 1996
Hideyuki Tsuji, Nara, JP;
Toshiyuki Shinozaki, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
In the case where ohmic electrodes are formed on a semiconductor wafer, first of all, an insulating layer is formed on the semiconductor wafer, then a resist layer is formed on the insulating layer. Next, apertures for forming electrodes are formed in first regions of the resist layer corresponding to regions where the electrodes are formed, while dummy apertures are also formed in a second region of the resist layer in a rest part other than the first regions. Thereafter, the insulating layer is etched using the resist layer as a mask. With the resist layer remaining, electrode material is accumulated on the surface of the semiconductor wafer, and thereafter, the resist layer is removed. As a result, electrodes with desirable ohmic characteristics are stably formed.