The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1999
Filed:
Sep. 27, 1996
Applicant:
Inventor:
Young-Soo Jang, Kyungki-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438234 ; 438212 ; 438272 ;
Abstract
A BiDMOS device in which a bipolar transistor and a DMOS transistor are formed on the same substrate, thereby resulting in a high degree of integration, and a method of fabricating the same using a reduced number of process steps. A high voltage operating characteristic is achieved because the gate of the DMOS transistor isolates the base and collector of the bipolar transistor. In addition, the junction capacitance between the bipolar base and collector regions is considerably reduced due to the isolation provided by the DMOS gate polysilicon.