The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1999
Filed:
Sep. 29, 1997
Applicant:
Inventors:
Lawrence S Klingbeil, Jr, Chandler, AZ (US);
Mark R Wilson, Phoenix, AZ (US);
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438180 ; 438184 ; 438516 ; 438520 ; 438525 ;
Abstract
A semiconductor device (20) is fabricated by doping a dielectric layer (29) located over the surface of a semiconductor substrate (21). The dielectric layer (29) contains nitrogen and is doped with silicon ions by using an ion implantation process (15) such that a peak concentration (32) of the silicon ions remains in the dielectric layer (29) during the ion implantation process (15). Doping the dielectric layer (29) reduces charge trapping in the dielectric layer (29) and reduces power slump in the semiconductor device (20) during high frequency operation.