The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1999
Filed:
Jul. 17, 1997
Hirotaka Kizuki, Tokyo, JP;
Motoharu Miyashita, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of fabricating a semiconductor device includes: forming multiatomic steps by MOCVD on a (110) semiconductor substrate inclined at an angle toward the �001! direction or the �111! direction; and growing at least one double heterostructure including a first compound semiconductor and a second compound semiconductor having a smaller band gap than the first compound semiconductor to form quantum wires of the second compound semiconductor at edges of the multiatomic steps. Multiatomic steps having step edges along the longitudinal direction of the wire have improved linearity, and thus, quantum wires can be fabricated with improved controllability.