The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1999
Filed:
Feb. 04, 1998
Applicant:
Inventor:
Kenneth J Petrosky, Severna Park, MD (US);
Assignee:
Northrop Grumman Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257577 ; 257532 ; 257531 ; 330300 ; 330307 ;
Abstract
A microwave power transistor device (20) is formed with impedance matching circuitry from a single elongated transistor die (70). Each of one or more transistor elements (56) is integrally formed with a blocking DC capacitor (54) on a common substrate of the transistor die. A wire (60 or 92) is connected between accurately positioned capacitor and transistor base connection points (90 and 80) to provide matching inductance for the parasitic base-collector capacitance of the transistor.