The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1999
Filed:
Feb. 23, 1993
Stanley R Shanfield, West Newton, MA (US);
Bharat Patel, Nashua, NH (US);
Hermann Statz, Wayland, MA (US);
Other;
Abstract
A field effect transistor having a substrate supporting an active layer comprising a Group III-V material. The active layer has a dopant concentration with a source electrode and a drain electrode disposed over and with a gate electrode disposed between the source and drain electrodes in Schottky barrier contact to the active layer. A surface layer portion of the active layer has a negatively charged surface potential disposed between the drain and gate electrodes comprised of said Group III-V material and oxygen. The surface layer portion has a thickness in the range of 25 .ANG. to 35 .ANG.. A layer of passivation material is disposed at least on the surface layer portion of the active layer.