The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 1999

Filed:

Dec. 27, 1996
Applicant:
Inventors:

Kurt Eisenbeiser, Tempe, AZ (US);

Jenn-Hwa Huang, Gilbert, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438694 ; 438762 ; 438767 ; 438771 ;
Abstract

A method of passivating semiconductor devices including the steps of providing a semiconductor device having a surface of semiconductor material to be passivated, exposing the surface of semiconductor material to deep ultra-violet (DUV) radiation in an ambiance including oxygen so as to form a layer of oxide on the surface of semiconductor material, and forming a layer of passivation material on the layer of oxide. The DUV oxide forms a different interface with the semiconductor material which significantly improves operating characteristics of the semiconductor device.


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