The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1999
Filed:
Sep. 30, 1996
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438304 ; 438267 ; 438286 ;
Abstract
An insulated gate semiconductor device (10) having a gate structure (45) that includes a conductive spacer (32) and an extension region (46) extending from the conductive spacer (32). To form the gate structure (45), a stack having sidewalls (22) is formed over a major surface (12) of a semiconductor substrate (11). A gate dielectric (23) is then formed over the major surface (12) adjacent to the sidewalls (22). The conductive spacer (32) is formed on the gate dielectric (23). The extension region (46) is then formed using selective growth or deposition and patterning of polysilicon adjacent the conductive spacer (32).