Method of fabricating a semiconductor memory device

Abstract

A semiconductor memory device including memory cells with the stacked-capacitor structure that makes it possible to prevent a contact pad from being damaged. This device includes a memory cell area and a peripheral circuit area formed on a semiconductor substrate. An interlayer insulating layer having first and second penetrating holes is formed to cover the entire substrate. A capacitor has lower and upper electrode and a dielectric located between these electrodes. The lower electrode is electrically connected to the first element through the first penetrating hole. Each of the peripheral circuits has a second element, a contact pad electrically connected to the second element, a pad insulating layer formed to cover the contact pad, a pad protection layer formed on the pad insulating layer, and an interconnection conductor electrically connected to the contact pad through a contact hole penetrating the pad protection and pad insulating layers. The contact pad is electrically connected to the second element through the second penetrating hole. The lower electrode and the contact pad are made by using a same conductive layer. The dielectric and the pad insulating layer are made by using a same insulative layer. The upper electrode and the pad protection layer are made by using a same conductive layer.