The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1999
Filed:
Aug. 13, 1997
Masahiro Fujiwara, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A thin film transistor formed on an insulative substrate includes: a first semiconductor film including a channel region and first source/drain regions; a gate insulating film formed on the channel region of the first semiconductor film; a gate electrode formed on the gate insulating film; an insulating film formed on surfaces of the gate electrode; and a second semiconductor film formed on the first source/drain regions of the first semiconductor film. The second semiconductor film includes second source/drain regions which make contact with the first source/drain regions of the first semiconductor film, respectively, the second source/drain regions being separated above the gate electrode by a gap.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile