The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1999
Filed:
Jun. 26, 1997
Richard C Li, Cupertino, CA (US);
Hy V Nguyen, San Jose, CA (US);
Scott S Nance, Sunnyvale, CA (US);
Xilinx, Inc., San Jose, CA (US);
Abstract
A memory system having a single-sided memory cell, a first voltage supply terminal and a control circuit is provided. The single-sided memory cell has a first node and a second node. Data values are written to the memory cell by selectively applying data signals to the first node or the second node, and data values are read from the memory cell from the second node. The control circuit is coupled to receive a data signal having one of a first state and a second state. The control circuit couples the first node of the memory cell to the first voltage supply terminal when the data signal is in the first state, thereby writing a first data value to the memory cell. The control circuit couples the second node of the memory cell to the first voltage supply terminal when the data signal is in the second state, thereby writing a second data value to the memory cell. Because the first voltage supply terminal is used to write both the first and second data values to the memory cell, problems associated with inadequate write voltages are eliminated by appropriate selection of the first supply voltage.