The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 02, 1999

Filed:

Aug. 27, 1997
Applicant:
Inventors:

Katsuhiko Kemmochi, Kouriyama, JP;

Kiyotaka Maekawa, Takefu, JP;

Chuzaemon Tsuji, Takefu, JP;

Manabu Saitou, Sabae, JP;

Hiroyuki Miyazawa, Takefu, JP;

Hiroyuki Watanabe, Takefu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N / ;
U.S. Cl.
CPC ...
436175 ; 436 83 ; 436127 ; 436149 ; 436150 ; 436151 ; 436111 ; 438 14 ; 134-2 ; 134-3 ; 134 10 ; 134 13 ; 134 26 ; 134 28 ; 134 29 ;
Abstract

An analytical method for the quantitative determination of the impurities in silicon dioxide by which trace amounts of hardly soluble impurities contained in silicon dioxide can be reliably decomposed and converted into a solution so that the contents of all of the impurities contained in silicon dioxide or, in particular, zirconium in a natural quartz powder can be accurately determined. Silicon dioxide is decomposed with hydrofluoric acid or an acid mixture of hydrofluoric acid and another inorganic acid to give a decomposition solution which is, as such or after admixture with another inorganic acid, subjected to evaporation to dryness and the residue is heated to cause fusion with addition of a salt or hydroxide of an alkali metal followed by dissolution of the salt or hydroxide of an alkali metal with pure water or with an aqueous solution of an inorganic acid to give an aqueous solution which is subjected to quantitative analysis of the impurities therein.


Find Patent Forward Citations

Kemmochi, Katsuhiko. (1999). Method for the analysis of impurity contents in silicon dioxide (U.S. Patent No. 5877027). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5877027

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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