The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1999
Filed:
Jan. 29, 1996
Yoshiteru Ishimaru, Tenri, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
The method for fabricating a semiconductor device according to the present includes the steps of: forming an opening in an electron beam resist layer formed on a semiconductor substrate; forming an opening in a photoresist layer formed on the electron beam resist layer in such a manner that the opening formed at the electron beam layer is exposed, and that the opening formed in the photoresist layer has a larger dimension than that of the opening formed in the electron beam resist layer; and forming an electrode having a T-shaped cross section by depositing an electrode material via the two openings, wherein the electron beam resist layer is formed of a polymethacrylate type electron beam resist, and the photoresist layer is formed of a styrene resin type negative resist containing a phenolic hydroxyl group.