The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 23, 1999

Filed:

Feb. 23, 1996
Applicant:
Inventor:

Joseph Farley, Villeneuve Loubet, FR;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H / ;
U.S. Cl.
CPC ...
361 18 ; 361 84 ; 361 90 ; 361115 ;
Abstract

This device includes, connected in parallel with each of the elements (I, II), corresponding shunt regulators (S11, R11, S21, R21) linked together in series, and the control electrodes of which are connected to networks of resistors which represent voltages of the elements which can be applied to respective comparators (C11, C12, C21, C22) of the lower and upper threshold voltages (Vth11, Vth12, Vth21, Vth22) of the elements with a reference voltage delivered by a reference voltage source (Vref), a switching MOSFET transistor (4), with low conduction resistance and with defined off-state impedance, connected between the most negative terminal of the set of elements (II) in series and the negative terminal (Vbat-) of the protection device and means of control of the MOSFET transistor from output signals from the comparators (C11, C12, C21, C22) in order to alter the state of the said MOSFET transistor (4) for the purpose of regulating the state of charge and of discharge of the elements (I, II). It makes it possible to use a common charger for NiCd and NiMH elements.


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