The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
Nov. 12, 1996
Yong-Ho Kim, Seoul, KR;
Byoung-Own Min, Inchon, KR;
Samsung Electronics, Co., Ltd., Suwon, KR;
Abstract
A charge pump circuit for charging/pumping charge into/out of a charge pumping capacitor. Charge is pumped from the capacitor to turn on one of a pair of MOSFET transistors formed in an integrated circuit for driving a load. The MOSFET transistors are connected at a node in series with one another. The charging capacitor has one end connected at the node and the other connected through a diode to one side of a power supply which is also applied across both transistors. An input signal turns the MOSFETs on and off in a complementary fashion. Each MOSFET has a gate which is discharged to ground when the MOSFET is turned off. A zener diode prevents the capacitor from pumping excess charge to the gate of the MOSFET to which it is connected. Another zener diode prevents damage resulting from excessive voltage external to the integrated circuit.