The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
Oct. 25, 1994
Applicant:
Inventors:
Masahiro Tomita, Anjyo, JP;
Yasuo Souki, Toyota, JP;
Motoki Ito, Nagoya, JP;
Kazuo Tanaka, Obu, JP;
Hiroshi Tanaka, Toyokawa, JP;
Assignee:
Nippondenso Co., Ltd., Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438747 ; 438752 ; 216 46 ; 216 90 ;
Abstract
A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.