The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
May. 30, 1997
Applicant:
Inventor:
Stephen Frank Geissler, Underhill, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438259 ; 438267 ; 438589 ;
Abstract
An EEPROM memory cell has a floating gate structure that extends over a sharp edge of a memory cell trench and into the trench. Channel hot electron injection techniques are used in conjunction with the floating gate structure to lower required programming voltages and times for the EEPROM cell. Further reductions in programming times and voltages are achieved using trench sidewall diffusions and substrate surface grooves. When used, the floating gate contourally follows the grooves intersecting the surface of the substrate.