The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
Jun. 30, 1997
Applicant:
Inventors:
Yowjuang W Liu, San Jose, CA (US);
Kuang-yeh Chang, Los Gatos, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438199 ; 438221 ; 438224 ; 438225 ; 438233 ; 438296 ; 438430 ; 438621 ; 438638 ; 438648 ; 438656 ;
Abstract
CMOS transistors are formed by a damascene process resulting in field oxide regions exhibiting essentially no bird's beak portions. A trench isolation is also formed in a source/drain region each transistor between adjacent junctions.