The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Feb. 19, 1997
Hirohide Okuno, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Mitsubishi Electric Engineering Co., Ltd., Tokyo, JP;
Abstract
A current bypass circuit used in a semiconductor integrated circuit supplied with power from power sources having respective different DC voltages in relation to a reference potential, a p type (or n type) substrate of the semiconductor integrated circuit being connected to the reference potential, includes a current switching circuit and a voltage level detecting circuit. The current switching circuit is connected between the reference potential and the DC voltage source for switching between a conductive state and a cutoff state. The voltage level detecting circuit is connected to a control power source that maintains the current switching circuit in a conductive state when the voltage appearing across both terminals of the current switching circuit is equal or lower than a predetermined voltage. The voltage level detecting circuit cuts-off the current switching circuit when the voltage across both terminals of the current switching circuit exceeds a predetermined value. Thereby, needed isolation between the elements in the semiconductor integrated circuit is provided.