The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Aug. 11, 1997
Applicant:
Inventors:
Udo Schwalke, Heldenstein, DE;
Heinz Zeininger, Obermichelbach, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257408 ; 257344 ; 257900 ;
Abstract
Shallow junction field effect transistors are made by a low temperature process comprising ion implanting source/drain regions through a buffer layer in two steps, the first an ion implant at high dosage and low energy and the second an ion implant at low dosage and high energy. Ion implantation through the buffer layer avoids crystallographic damage to the silicon substrate. By grading the sidewall spacers of the gate electrode, more or fewer ions can be implanted through the spacer foot to ensure continuity between the source/drain regions and the channel region under the gate electrode.