The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 16, 1999

Filed:

Jun. 20, 1997
Applicant:
Inventor:

Masahiro Itoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257296 ; 257295 ;
Abstract

A semiconductor device employable as a capacitor has a conductive pillar arranged in an opening produced in an insulator layer produced on a semiconductor substrate, the conductive pillar being connected with a conductive region of the semiconductor substrate and being surrounded by a dielectric cylinder which is further surrounded by a conductive cylinder which extends onto the surface of the semiconductor substrate, thereby allowing a capacity, regardless of the horizontal area of the semiconductor device. A semiconductor memory cell of the one transistor and one capacitor structure has a capacitor which has a conductive pillar arranged in an opening produced in an insulator layer produced on a semiconductor substrate, the conductive pillar being connected with a conductive region of the semiconductor substrate and being surrounded by a dielectric cylinder which is further surrounded by a conductive cylinder which extends onto the surface of the semiconductor substrate, whereby a large magnitude of integration is readily realized.


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