The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Jun. 09, 1997
Kil Ho Lee, Ichon, KR;
Sang Ho Yu, Ichon, KR;
Hyundai Electronics Industries Co., Ltd., Ichon, KR;
Abstract
A method for forming a shallow junction of a semiconductor device, characterized by a rapid thermal process executed to considerably decrease the density of the point defects which may be caused by ion implantation. With it, a junction which is much shallower, with lower sheet resistance and less junction leakage current can be obtained even under conventional ion implantation and tube treatment conditions. This contributes to an improvement in the production yield of a semiconductor device. By virtue of the elimination of the point defects, the limits in selecting the tube thermal treatment temperature and time for planarizing the subsequent interlayer insulating film can be relieved, so that process allowance can be secured, thereby improving the reliability of the semiconductor device and allowing the high integration of the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile