The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Jan. 22, 1997
Murata Manufacturing Co., Ltd., Kyoto, JP;
Abstract
Disclosed herein is a magnetostatic wave device that employs a single-crystal thin film of the formula Y.sub.3-x M.sub.x Fe.sub.5-y N.sub.Y O.sub.12 (where M denotes at least one member selected from La, Bi, Lu, and Gd, N denotes at least one member selected from Al, In, and Sc, and x and y are defined as 0<x.ltoreq.1.0 and 0<y.ltoreq.1.5, respectively) which is formed by liquid phase epitaxy on a single-crystal substrate of Gd.sub.3 Ga.sub.5 O.sub.12, characterized in that said single-crystal thin film has a lattice constant larger than that of said single-crystal substrate, with the difference (.increment.a) between the two lattice constants being in the range defined by 0.0004 nm.ltoreq..increment.a.ltoreq.0.001 nm. It has good characteristic properties (e.g., low insertion loss and ripple).