The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1999
Filed:
Jun. 13, 1997
Yusuf A Haque, San Jose, CA (US);
Patrick Chan, Sunnyvale, CA (US);
Maxim Integrated Products, Inc., Sunnyvale, CA (US);
Abstract
A power level sense circuit which is substantially immune to variations in integrated circuit processing and operating temperature. The sense circuit uses a diode biased to a predetermined average conduction level as the primary element in an envelope detector to detect the envelope of the RF transmit signal. While the DC offset of the diode will vary with temperature and integrated circuit processing, the DC offset is eliminated by an auto zeroing procedure before each power sensing cycle.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile