The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1999
Filed:
Oct. 07, 1997
Kyu-Hong Lee, Daejeon, KR;
Jin-Hyo Lee, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
The present invention relates to a pillar bipolar transistor and the fabricating method thereof, the active region on which the emitter region, the base region and the collector region are formed, is defined at the first pillar by the trench formed in the semiconductor substrate, a party of the base region and the polysilicon base electrode is electrically connected by the base connection, thereby decreasing the contact area and protecting to increase the extrinsic region of the base, and protecting to mask a juction of base to emitter at high concentration. Also, the polysilicon emitter electrode having the wide surface area is formed by self-aligned contact using the CMP method on the upper of the emitter region. Therefore, the active region of the transistor is defined in the first pillar, so that the parasitic capacitance between the emitter and the collector, and the base is decreased, and the contact area between the base region and the polysilicon base electrode is also decreased, thereby enhancing the operational characteristic of the transistor by protecting to increase the extrinsic region of the base, and the current gain similar to the forward operation of the transistor can be obtained in the backward operation of the transistor. Also, the emitter polysilicon electrode having the wide surface is self-arranged with the emitter region, thereby easily forming the contact opening to form the emitter electrode.