The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 1999

Filed:

Jan. 24, 1997
Applicant:
Inventors:

Seiichiro Ishio, Handa, JP;

Kenichi Ao, Yokai, JP;

Hiroshige Sugito, Nagoya, JP;

Assignee:

Denso Corporation, Kariya, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257419 ; 257254 ; 257415 ; 257417 ; 257418 ; 438 50 ; 438 53 ;
Abstract

A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.


Find Patent Forward Citations

Ishio, Seiichiro. (1999). Semiconductor strain sensor (U.S. Patent No. 5869876). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5869876

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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